NbMC layers

ABSTRACT

Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.

FIELD OF THE INVENTION

The present disclosure generally relates to techniques for forming structures including one or more niobium metal or metalloid carbide (NbMC) layers, to devices including the one or more niobium metal or metalloid carbide layers, and to methods of forming the structures and devices.

BACKGROUND OF THE DISCLOSURE

Field-effect transistor (FET) devices, such as metal-oxide-semiconductor FET (MOSFET) devices generally include a source region, a drain region, a channel region between the source and drain regions, and a gate electrode overlying the channel region and separated from the channel region by a dielectric material. A complimentary MOSFET (CMOS) device includes a p-type MOSFET device and an n-type MOSFET device. There are also three-dimensional transistor architectures like FinFET's. To operate as desired, a work function of the gate electrode of the n-type device and of the p-type device must differ by a certain amount. The difference in the work function is generally obtained by tuning the gate electrode material.

Traditionally, MOSFET devices are formed using silicon oxide as the dielectric material and polysilicon as the gate electrode material. Polysilicon has worked relatively well as a gate electrode material, because it allows relatively easy tuning of a work function of the devices and consequently a threshold voltage of the devices.

As MOSFET devices are scaled down to meet desired performance criteria, metal has generally replaced polysilicon as a gate electrode material and high dielectric constant material has generally replaced silicon oxide as the dielectric material for high performance devices. However, by replacing polysilicon with metal, a work function difference between the gate and the channel becomes more difficult to tune. As a result, modification of a threshold voltage of the device becomes more difficult.

To facilitate work function tuning of MOSFET devices including a metal gate electrode, gate structures can include an additional metal layer, i.e., a work function layer, to tune the work function and consequently the threshold voltage of the devices. Generally, the work-function layers are relatively less conductive than gate electrode metal, which can result in a loss of desired performance of the devices. Attempts to increase the conductivity of the work-function layers generally results in lower work function of the devices.

Accordingly, improved material layers suitable for tunable work function layers and structures and devices including such layers as well as methods of forming such layers, structures, and devices are desired.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure relate to methods of forming structures and devices including one or more niobium metal and/or metalloid carbide (collectively referred to herein as NbMC, where M represents a metal and/or metalloid) layers or films and to structures and devices including NbMC layers. In general, embodiments of the disclosure provide methods of forming structures and devices with one or more NbMC tunable work function layers that exhibit relatively low resistivity and/or that are relatively easy to tune. Additionally, exemplary devices and structures including NbMC layers exhibit relatively low work functions and the work function of such devices and structures can be tuned over a relatively wide range. Further, exemplary NbMC layers can exhibit relatively high oxidation resistance, relative to other material layers used as work function or similar layers. The films are just recited with acronym NbMC for simplicity reasons for films comprising niobium, metal or metalloid and carbon and acronym NbMC does not limit, for example, the stoichiometry of the films or bonding types in the films or bonding between atoms.

Various other embodiments of the disclosure relate to a method of forming a thin-film structure, wherein the method includes providing a substrate within a reaction space and using a first cyclic deposition process, forming a layer comprising NbMC, wherein M represents a metal, such as aluminum and/or metalloid (sometimes referred to as a semimetal), such as boron, on the surface of the substrate, and wherein the first cyclic deposition process comprises at least one deposition cycle comprising alternately providing to the reaction space a first precursor comprising Nb and a second precursor comprising a metal (and/or metalloid) and carbon. The first precursor can comprise a niobium halide, such as niobium chloride (NbCl₅) and/or other compounds that include niobium and chlorine or, in the case of metalloids, niobium fluoride (NbF₅) The second precursor can include one or more carbon-contributing compounds, such as organometallic compounds—e.g., metal (e.g., aluminum) hydrocarbon compounds or metalloid (e.g., boron) hydrocarbon compounds. The metal or metalloid hydrocarbon compound can be, for example, an alkyl, alkenyl or alkynyl compound of metal or metalloid. The metal or metalloid hydrocarbon compound can be, for example, an alkyl, compound of aluminum or boron. In some embodiments, the metal hydrocarbon compound comprises at least one or more Al—C bonds. In some embodiments, the metal hydrocarbon compound comprises two or less Al—H bonds. In some embodiments, the metal hydrocarbon compound does not comprise Al—Al bonds. In some embodiments, the metal hydrocarbon compound does not comprise oxygen and/or a halide. In some embodiments, the metal hydrocarbon compound comprises only aluminum, hydrogen and carbon and no other elements. In some embodiments, aluminum hydrocarbon compound comprises C₂-C₅ or C₂-C₄ hydrocarbon ligand, such as alkyl ligand, attached to aluminum. By way of examples, an aluminum hydrocarbon compound is selected from one or more of the group consisting of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminum hydride (DMAH), dimethylethylaminealane (DMEAA), trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA), tri-isobutylaluminum (TIBA), and tritertbutylaluminum (TTBA). In some embodiments, aluminum hydrocarbon compound is not trimethylaluminum (TMA). In some embodiments, the metal hydrocarbon compound comprises a tertbutyl ligand bonded to aluminum. In some embodiments, the metal hydrocarbon compound is tritertbutylaluminum. In some embodiments, the metalloid (e.g., boron) hydrocarbon compound comprises an alkylboron compound. In some embodiments, the boron hydrocarbon compound comprises at least one or more B—C bonds. In some embodiments, the boron hydrocarbon compound comprises B—H bonds. In some embodiments, the boron hydrocarbon compound does not comprise B—B bonds. In some embodiments, the boron hydrocarbon compound does not comprise compounds having only boron and hydrogen. In some embodiments, the boron hydrocarbon compound does not comprise oxygen and/or a halide. In some embodiments, the boron hydrocarbon compound comprises boron, hydrogen and carbon and no other elements. By way of examples, a boron hydrocarbon compound is selected from one or more of the group consisting of trimethylboron and triethylboron. In some embodiments, the boron hydrocarbon compound comprises boron compounds having one, two or three C1-C5 hydrocarbon ligands, such as alkyl ligands. In accordance with further aspects of these embodiments, the method further comprises using a second cyclic deposition process comprising at least one deposition cycle comprising alternately providing to the reaction space a third precursor comprising Nb and a fourth precursor comprising a metal and/or metalloid and carbon, wherein at least one of: the third precursor differs from the first precursor and the fourth precursor differs from the second precursor. In these cases, the first cyclic deposition process and the second cyclic deposition process have at least one precursor that differs from the precursors used in the other process. This can allow additional tuning of structures and devices that include the NbMC layers. Although described in connection with forming the layers in a reaction space, NbMC layers can be formed using spatial deposition methods. Exemplary deposition methods including spatial are described in more detail below.

In accordance with yet further exemplary embodiments of a disclosure, a device is formed using a method as described herein. Exemplary methods to form a device include providing a substrate within a reaction space and using a first cyclic deposition process, forming a layer comprising NbMC, wherein M represents a metal and/or metalloid, on the surface of the substrate, and wherein the first cyclic deposition process comprises at least one deposition cycle comprising alternately providing to the reaction space a first precursor comprising Nb and a second precursor comprising a metal and/or metalloid and carbon. The first and second precursors can be the same or similar to those described above and elsewhere herein. Exemplary methods can include forming additional device layers, such as a gate oxide layer and/or a gate electrode layer.

Other embodiments of this disclosure relate to a thin-film structure that includes a substrate and one or more NbMC layers formed overlying the substrate. The one or more NbMC layers can include up to about 30% to about 60% or about 40% to about 50% carbon on an atomic basis, about 10% to about 40% or 20% to about 30% niobium on an atomic basis, and about 10% to about 40% or 20% to about 30% metal (e.g., a Group 13 metal, such as aluminum) and/or metalloid (e.g., boron) on an atomic basis. M can be selected from the group consisting of aluminum or boron. Exemplary structures can also include layers in addition to the NbMC layer, such additional layers including, but not limited to, one or more of: a substrate, a dielectric layer, an etch stop layer, a barrier layer, and a metal layer. Properties of the structures can be manipulated by tuning one or more of the NbMC layers. For example, the properties can be manipulated by: (1) adjusting a number of NbMC layers that are deposited, (2) adjusting a composition of one or more NbMC layers, and/or (3) adjusting a thickness of each layer. Structures in accordance with these embodiments can have any suitable number of NbMC layers, other metal carbide layers, and other layers. Exemplary NbMC films can include discrete layers or a mixture of NbMC layers deposited onto a surface using two or more processes and/or a NbMC layer mixed with one or more other metal carbide layers. The two or more processes can use, for example, at least one different precursor to adjust the composition or properties of the NbMC layer. In some embodiments the NbMC film does not comprise substantial or any amount of nitrogen. In some embodiments the NbMC film does not comprise substantial or any amount of transition metal other than niobium.

A thickness of each NbMC layer can range from about 20 Å to about 100 Å. In some embodiments, the thickness NbMC layers in an NMOS stack application is from about 10 Å to about 100 Å, from about 15 Å to about 75 Å, or from about 20 Å to about 50 Å. In some embodiments, the thickness NbMC layers is less than 50 Å or less than 30 Å thick. In other embodiments the thickness NbMC layers is from about 5 Å to about 1000 Å, from about 15 Å to about 500 Å, or from about 20 Å to about 200 Å. In some embodiments, the thickness NbMC layers is less than 500 Å or less than 100 Å thick.

A thin-film resistivity of the NbMC layers, as measured using a four-point probe and X-ray reflectivity (XRR), can range from about 400 μohm-cm to about 850 μohm-cm. A bulk resistivity of the NbMC layers, as measured using a four-point probe and XRR, can range from about 150 μohm-cm to about 800 μohm-cm. In some embodiments, the resistivity of a NbMC deposited layer having a thickness of about 10 nm is from about 3 to about 10⁶ μohm-cm or from about 5 to about 10⁵ ohm-cm as measured using a four-point probe and XRR. In some embodiments, the resistivity of a NbMC layer deposited is from about 50 to about 10⁴ ohm-cm as measured from about 10 nm thick layers. In some embodiments, the resistivity of a NbMC layer deposited is less than about 5×10³ μohm-cm, less than (about) 1000 μohm-cm, less than about 400 μohm-cm as measured from about 10 nm thick layers. In some embodiments, the resistivity of a NbMC layer deposited is less than about 200 μohm-cm or less than about 150 μohm-cm as measured from about 10 nm thick layers. Resistivity of the layer generally varies if the layers are thin, in which case the resistivity is usually higher, and in case of thicker layers the resistivity might be closer bulk or bulk thin layer resistivity values.

In some embodiments, of the present disclosure, NbMC layers can be formed in which the effective workfunction, or eWF, can be from about 4.0 to about 4.9 eV, from about 4.1 to about 4.6 eV, or from about 4.15 to about 4.3 eV. In some embodiments, NbMC layers can be formed in which the effective workfunction, or eWF, can be less than about 4.5 eV, less than about 4.4 eV, less than about 4.3 eV or less than about 4.25 eV. In some embodiments, the work function of the NbMC is measured from about 10 Å to about 100 Å layers, from about 15 Å to about 75 Å layers, from about 20 Å to about 50 Å layers—e.g., formed on a test structure. In some embodiments, the work function or eWF of the NbMC is measured from less than about 50 Å or less than about 30 Å thick layers. The work function and eWF values noted herein can be measured using electrical test structures.

In accordance with further exemplary embodiments, a device includes one or more structures as described herein. The devices can be configured as, for example, NMOS and/or PMOS devices to form CMOS devices.

Both the foregoing summary and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

FIG. 1 illustrates a structure including a NbMC layer in accordance with exemplary embodiments of the disclosure.

FIG. 2 illustrates another structure in accordance with additional exemplary embodiments of the disclosure.

FIG. 3 illustrates another structure in accordance with additional exemplary embodiments of the disclosure.

FIG. 4 illustrates yet another structure in accordance with additional exemplary embodiments of the disclosure.

FIG. 5 illustrates a device in accordance with exemplary embodiments of the disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE DISCLOSURE

The description of exemplary embodiments of methods, structures, and devices provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features.

Exemplary embodiments of the present disclosure relate to methods of depositing NbMC layers onto a substrate and to structures and devices including one or more NbMC layers. Exemplary NbMC layers include niobium, a metal and/or metalloid, and carbon. The metal can include one or more metals, such as a Group 13 metal (e.g., aluminum); the metalloid can include one or more metalloids (e.g. boron). The niobium NbMC films can also include other elements, such as nitrogen, hydrogen, trace amounts of other materials, and the like.

As set forth in more detail below, exemplary NbMC films are suitable for use as, for example, tunable work function layers in, e.g., NMOS, PMOS, and/or CMOS devices, and may be particularly suitable for FinFET devices and structures. Exemplary NbMC layers are particularly desirable for such applications, because the films exhibit relatively low resistivity (e.g., from about 400 μohm-cm to about 850 μohm-cm, as measured using 4 point probe and XRR or other values as set forth herein), while still providing structures with desired work functions (e.g., eWF ranging from about 4.0 to about 4.9 eV or other values as set forth herein). In addition, the NbMC layers exhibit relatively high oxidation resistance, scalability, and good step coverage, compared to other films typically used to form work function tuning layers.

Properties of the NbMC layers and structures and devices including such layers can depend on a variety of factors, including composition of the material—e.g., percentage of each component—e.g., metal(s) and carbon present in the material, as well as the morphology of the metal carbide material. For example, an amount of metal, such as aluminum, or metalloid, such as boron, in the composition can be manipulated to tune the NbMC layer to obtain a desired work function.

Exemplary NbMC layers include up to about 30% to about 60% or about 40% to about 50% carbon on an atomic basis, about 10% to about 40% or 20% to about 30% niobium on an atomic basis, and about 10% to about 40% or 20% to about 30% metal (e.g., a Group 13 metal, such as aluminum) and/or metalloid (e.g., boron) on an atomic basis. As noted above, the layers can include additional elements, such as trace elements, that may be deposited in the films during a deposition step. In some embodiments, the NbMC layer comprises from about 2% to about 60%, from about 5% to about 55%, from about 10% to about 50%, from about 20% to about 45%, or from about 35% to about 45% carbon on atomic basis. In some embodiments, the NbMC layer comprises up to about 60% or up to about 50% carbon on atomic basis. In some embodiments, the NbMC layer comprises as least about 2% or at least about 20% carbon on atomic basis. In some embodiments, the deposited NbMC layer comprises from about 1% to about 55%, from about 20% to about 55%, from about 30% to about 50%, from about 25% to about 35%, or from about 27% to about 33% niobium on atomic basis. In some embodiments, the deposited NbMC layer comprises at least about 10%, at least about 25%, or at least about 30% niobium on atomic basis. In some embodiments, the NbMC layer comprises from about 5% to about 75%, from about 7.5% to about 60%, from about 10% to about 45%, from about 10% to about 40%, or from about 10% to about 20% metal and/or metalloid (e.g., aluminum or boron) on atomic basis. In some embodiments, the deposited NbMC layer comprises at least about 10%, at least about 20%, at least about 25% or at least about 35% metal (e.g., aluminum) and/or metalloid (e.g., boron) on atomic basis.

In some applications, it is desired that structures that include the metal carbide films have relatively low resistivity, relatively low leakage current, and a relatively low work function. It was found that the NbMC layers can be used to form devices with a combination of relatively low resistivity, relatively low leakage current, and a relatively low work function, as well as low oxidation rates.

In the context of this document, a “layer” or “film” can be used interchangeably and can refer to a continuous or discontinuous layer or film. Further, when structures or devices include more than one layer of NbMC and/or metal carbide, the NbMC and/or metal carbide layers can be discrete (e.g., form a nanolaminate) or the layers can mix together during or after deposition of a layer. Multiple layers of NbMC can have the same or similar elemental compositions—e.g., include substantially the same elements, but because of the different processes, bonding, and/or precursors used to form the respective films, the respective films, and therefore the overall NbMC material can have different properties. By way of examples, in some embodiments the NbMC layer comprises both a metal (e.g., aluminum) and a metalloid (e.g., boron).

The methods of depositing NbMC material can be used to form structures including NbMC layers. The structures, in turn, can be used to form devices (e.g., CMOS and FinFET devices) including the structures. As set forth in more detail below, in accordance with some examples, the structures include two or more NbMC layers deposited using different processes.

In accordance with some exemplary embodiments of the disclosure, a method of forming a thin-film structure includes providing a substrate and using a first cyclic deposition process, forming a layer comprising NbMC on the surface of the substrate, wherein the first cyclic deposition process comprises at least one deposition cycle comprising alternately providing to the surface of the substrate a first precursor comprising Nb and a second precursor comprising a metal and/or metalloid and carbon. In some embodiments the NbMC film does not comprise substantial or any amount of transition metal other than niobium. In some embodiments the NbMC film may comprise other transition metal than niobium. A cyclic deposition processes described herein can include one or more deposition cycles, wherein each deposition cycle includes:

1. providing a first precursor (e.g., one or more niobium halide compounds) to a reaction space;

2. purging and/or evacuating any excess first precursor and/or reaction byproducts;

3. providing a second precursor (e.g., one or more organometallic compounds, such as a metal and/or metalloid hydrocarbon compounds—e.g., as described herein) to the same or another reaction space; and

4. purging and/or evacuating any excess second precursor and/or reaction byproducts. Steps 1-4 can be referred to as a cyclic deposition (e.g., an atomic layer deposition (ALD)) cycle. Steps 1-4 can be repeated as desired using a first and/or second process to produce a NbMC film of desired thickness and with a desired composition (e.g., desired niobium, aluminum and/or boron, and/or carbon concentration). For example, steps 1-4 can be repeated up to 10, 100 or even 1000 or more times to produce NbMC layers with, e.g., uniform thicknesses, and ranging from one or several atomic layers to 100 nanometers (nm) or more. In some embodiments the order of steps 1-4 is not limited and steps 3 and/or 4 can be performed before steps 1 and/or. Similarly in some embodiments the first precursor might be provided after second precursor and second precursor before the first precursor, if desired. In some embodiments, steps 1-4 can be repeated until a NbMC film is formed with a thickness of from about 1 to about 1000 Å, less than about 1000 Å, or less than about 500 Å. In some embodiments, the film has a thickness of less than about 300 Å, and in other embodiments less than about 200 Å. In one embodiment, the thickness is between about 10 Å and about 100 Å. In other embodiments the thickness is from about 20 Å to about 200 Å or about 10 Å to about 50 Å or about 25 Å to 40 Å. One can appreciate that a thickness of the NbMC film can vary depending on the particular application. As an example, for NMOS gate applications, the thickness is typically from about 20 Å to about 500 Å or about 20 Å to about 50 Å. As another example, for MIM capacitor applications (e.g., DRAM, eDRAM, etc.) the thickness range is typically from about 50 Å to about 200 Å. Further, for applications in which the NbMC film serves to set the work function in a flash memory, the thickness can be, for example, between about 20 Å and about 200 Å. Other exemplary film thicknesses are set forth herein.

In some embodiments, a NbMC film is deposited on a substrate in a reaction space or using spatial deposition by an ALD type deposition process comprising at least one cycle comprising:

-   -   1. exposing the substrate to a first gas phase precursor         comprising Nb;     -   2. exposing the substrate to a purge gas and/or removing excess         first precursor and reaction by products, if any, from the         substrate;     -   3. exposing the substrate to a second gas phase precursor         comprising aluminum and/or boron;     -   4. exposing the substrate to a purge gas and/or removing excess         second precursor and reaction by products, if any, from the         substrate; and     -   5. optionally repeating the exposing and/or removing steps until         a NbMC film of the desired thickness has been formed.

In some embodiments, a NbMC film is deposited on a substrate in a reaction space or using spatial deposition by an ALD type deposition process comprising at least one cycle comprising:

-   -   1. depositing a first gas phase precursor comprising Nb onto the         substrate;     -   2. applying a purge gas to a substrate and/or removing excess         second precursor and reaction by products, if any, from the         substrate;     -   3. depositing a second gas phase precursor comprising aluminum         and/or boron onto the substrate;     -   4. applying a purge gas to a substrate and/or removing excess         second precursor and reaction by products, if any, from the         substrate; and     -   5. optionally repeating the depositing and applying a purge gas         and/or removing steps until a NbMC film of the desired thickness         has been formed.

In some embodiments, a NbAlC film is deposited on a substrate in a reaction space or using spatial deposition by an ALD type deposition process comprising at least one cycle comprising:

-   -   1. exposing the substrate to a first gas phase precursor         comprising NbCl₅;     -   2. exposing the substrate to a purge gas and/or removing excess         second precursor and reaction by products, if any, from the         substrate;     -   3. exposing the substrate to a second gas phase precursor         comprising TTBA;     -   4. exposing the substrate to a purge gas and/or removing excess         second precursor and reaction by products, if any, from the         substrate; and     -   5. optionally repeating the exposing and/or removing steps until         a NbAlC film of desired thickness has been formed.

In some embodiments, steps 1 and 2 are repeated a predetermined number of times prior to steps 3 and 4. For example, steps 1 and 2 may be repeated five times prior to steps 3 and 4. As another example, steps 1 and 2 may be repeated ten times prior to steps 3 and 4. In some embodiments, when repeating steps 1 and 2 more than one time before steps 3 and 4, the first precursor in step 1 can be independently selected to be different in repeated steps before steps 3 and 4. In some embodiments, steps 3 and 4 are repeated a predetermined number of times prior to steps 1 and 2. For example, steps 3 and 4 may be repeated five times prior to steps 1 and 2. As another example, steps 3 and 4 may be repeated ten times prior to steps 1 and 2. In some embodiments, when repeating steps 3 and 4 more than one time before steps 1 and 2, the second precursor in step 3 can be independently selected to be different in repeated steps before steps 1 and 2 It should be understood that if a NbMC film with compositional uniformity is desired, the number of times steps 1 and 2 are repeated should not exceed that which will prevent substantial carburization of the metal film. In accordance with one example, the metal compound has a low decomposition temperature and the number of times steps 1 and 2 are repeated does not exceed one. In some embodiments, step 1 (e.g., providing a first precursor, exposing the substrate to a first gas phase precursor, or depositing a first gas phase precursor) comprises providing mixtures of first precursors, such as mixture comprising two or more niobium precursors. In some embodiments, the step 3 (e.g., providing a second precursor, exposing the substrate to a second gas phase precursor, or depositing a second gas phase precursor) comprises providing mixtures of second precursors, such as mixture comprising two or more aluminum hydrocarbon precursors.

A growth rate of the NbMC layers can vary depending on the reaction conditions. In some embodiments, the growth rate may be from about 0.01 Å/cycle to about 10.0 Å/cycle, from about 0.1 Å/cycle to about 5 Å/cycle, or from about 0.3 Å/cycle to about 3.0 Å/cycle. In some embodiments, the growth rate is about 2.5 Å/cycle. In some embodiments, the growth rate may be more than about 2 Å/cycle, more than about 3 Å/cycle, more than about 5 Å/cycle or more than about 10 Å/cycle—for example, in cases where some decomposition of the precursor occurs and the deposition rate increases without substantial limit when the pulse time is increased. As noted above, in accordance with some exemplary embodiments of the disclosure, a method of forming a thin-film structure includes depositing a first NbMC layer using a first precursor and a second precursor and depositing a second NbMC layer using a third precursor and a fourth precursor. In these cases, exemplary deposition cycles include:

A first process that includes:

1. providing a first precursor (e.g., one or more niobium halides) to a surface of a substrate;

2. purging and/or evacuating any excess first precursor and/or reaction byproducts;

3. providing a second precursor (e.g., one or more first metal (e.g., aluminum) and/or first metalloid (e.g., boron) hydrocarbon compounds) to the surface of the substrate; and

4. purging and/or evacuating any excess second precursor and/or reaction byproducts. A second process that includes:

5. providing a third precursor (which can be the same as the first precursor) to the surface of the substrate;

6. purging and/or evacuating any excess third precursor and/or reaction byproducts;

7. providing a fourth precursor (e.g., an aluminum and/or boron hydrocarbon compound that is different than the second precursor) to the surface of the substrate; and

8. purging and/or evacuating any excess fourth precursor and/or reaction byproducts.

The steps can take place is a reaction space or using spatial deposition. The first and/or second processes can be repeated a desired number of times and need not be consecutive and the ratio of first cycles to second cycles can be selected to achieve the desired composition. Further, although described in connection with the first precursor including a niobium halide, the process steps could be reversed, with the first process including the one or more first metal (e.g., aluminum) or metalloid (e.g., boron) hydrocarbon compounds followed by providing the niobium-containing precursor.

Exemplary methods can include formation of additional metal carbide or similar layers. Further, exemplary methods can include use of one or more plasma-excited species that can be introduced to the reaction chamber during or between steps.

The following general conditions apply to any of the deposition cycles disclosed herein. The reaction temperature can range from about 150° C. to about 600° C., about 200° C. to about 500° C., about 250° C. to about 450° C., about 300° C. to about 425° C., or about 350° C. to 400° C., or between about 325° C. to about 425° C., or about 375° C. to about 425° C. or about 360° C. to about 385° C. A reaction chamber pressure can be from about 0.5 to about 10 torr, or about 2 to about 7 torr. The pressure can be adjusted to achieve a desirable growth rate and acceptable uniformity.

A first and/or third precursor (e.g., niobium reactant) pulse time can be from about 0.1 to about 20 seconds or about 1 to about 10 seconds. A second and/or fourth precursor (e.g., aluminum and/or boron hydrocarbon compound) pulse time can be from about 0.1 to about 20 seconds or from about 0.5 to about 5 seconds.

Purge times are generally from about 0.1 to about 10 seconds, or about 2 to about 8 seconds. In some embodiments, a purge time of about 6 seconds is used. However, in other embodiments longer purge times may be used. In some embodiments, purge times are the same for purging the first, second, third and/or fourth precursor, while in other embodiments the purge times are different for the different precursors.

Flow rates are generally from about 100 to about 400 sccm for the inert purge gas. The carrier flow for any of the precursors (including any carrier gas) can be about 100 to about 400 sccm. The carrier gas is preferably an inert gas, and may be the same as or different from the purge gas. The flow rates of the purge and carrier gases can be determined based, in part, on the particular reactor use to deposit the NbMC layers.

The cyclic deposition steps can be performed in any suitable reactor, such as a showerhead ALD reactor—e.g., an EmerALD® reactor or cross flow reactor e.g. a Pulsar® reactor or batch reactor e.g. Advance® available from ASM America or ASM International N.V. In some embodiments, the reactor can be spatial (e.g., ALD) reactor, in which the substrate or gas distribution system is moved, such as rotated, relative to the other of the gas distribution system or substrate. Further, all or some of the steps described herein can be performed without an air or vacuum break. Further, as is generally understood, processes as described herein can include chemical vapor deposition reaction—in other words, the reactions may not be “pure” ALD reactions.

The first precursor can include, for example, one or more niobium halides, such as one or more niobium bromides, chlorides, and/or iodides. By way of examples, the first precursor includes niobium chloride (NbCl₅), and in the case of niobium metalloid carbides, niobium fluoride (NbF₅). When the first precursor includes two or more of such compounds, the compounds can be delivered to a reaction chamber at the same time or in separate pulses.

The second precursor can include one or more carbon-contributing compounds, such as organometallic compounds—e.g., metal (e.g., aluminum) hydrocarbon compounds or metalloid (e.g., boron) hydrocarbon compounds. The metal or metalloid hydrocarbon compound can be, for example, an alkyl, alkenyl or alkynyl compound of metal or metalloid. The metal or metalloid hydrocarbon compound can be, for example, an alkyl, compound of aluminum or boron. In some embodiments, the metal hydrocarbon compound comprises at least one or more Al—C bonds. In some embodiments, the metal hydrocarbon compound comprises two or less Al—H bonds. In some embodiments, the metal hydrocarbon compound does not comprise Al—Al bonds. In some embodiments, the metal hydrocarbon compound does not comprise oxygen and/or a halide. In some embodiments, the metal hydrocarbon compound comprises only aluminum, hydrogen and carbon and no other elements. By way of examples, an aluminum hydrocarbon compound is selected from one or more of the group consisting of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminum hydride (DMAH), dimethylethylaminealane (DMEAA), trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA), tri-isobutylaluminum (TIBA), and tritertbutylaluminum (TTBA). In some embodiments, the metal hydrocarbon compound comprises a tertbutyl ligand bonded to aluminum. In some embodiments, the metal hydrocarbon compound is tritertbutylaluminum. In some embodiments, the metalloid (e.g., boron) hydrocarbon compound comprises an alkylboron compound. In some embodiments, the boron hydrocarbon compound comprises at least one or more B—C bonds. In some embodiments, the boron hydrocarbon compound comprises B—H bonds. In some embodiments, the boron hydrocarbon compound does not comprise B—B bonds. In some embodiments, the boron hydrocarbon compound does not comprise compounds having only boron and hydrogen. In some embodiments, the boron hydrocarbon compound does not comprise oxygen and/or a halide. In some embodiments, the boron hydrocarbon compound comprises boron, hydrogen and carbon and no other elements. By way of examples, a boron hydrocarbon compound is selected from one or more of the group consisting of trimethylboron and triethylboron. In some embodiments, the boron hydrocarbon compound comprises boron compounds having one, two or three C1-C5 hydrocarbon ligands, such as alkyl ligands. When the second precursor includes two or more of such compounds, the compounds can be delivered to a reaction chamber at the same time or in separate pulses. In some embodiments, the boron or aluminum hydrocarbon compounds has a purity of more than about 99%, more than about 99.9%, more than about 990.99%, more than about 990.999% or close to about 100%.

As noted above, in some cases, a method can include a second cyclic deposition process to form multiple layers of NbMC. In these cases, a second cyclic deposition process can include at least one deposition cycle comprising alternately providing to the reaction space or a substrate surface a third precursor comprising Nb and a fourth precursor comprising a metal and/or metalloid and carbon. The third precursor can be selected from the list of compounds noted above in connection with the first precursor. For example, the third precursor can include a niobium halide, such as niobium chloride. The fourth precursor can be selected from the list of compounds noted above in connection with the second precursor. In some cases, at least one of: the third precursor differs from the first precursor and the fourth precursor differs from the second precursor. By way of particular examples, NbMC films are formed using NbCl₅ as the first and third precursors and TEA and/or TTBA as the second and fourth precursors.

The second and/or fourth precursor, e.g., metal (e.g., aluminum) and/or metalloid (e.g., boron) hydrocarbon compound, can be selected to achieve desired characteristics in the metal carbide film. The characteristics include, without limitation, adhesion, resistivity, oxidation resistance and work function. For example, by selecting an appropriate metal (e.g., aluminum) and/or metalloid (e.g., boron) hydrocarbon or other compound and appropriate deposition conditions, an amount of metal (e.g., aluminum) and/or metalloid (e.g., boron) in the metal carbide film can be controlled. By way of particular examples, to achieve a higher metal (e.g., aluminum) concentration in a particular film, TEA may be selected over TMA. In some embodiments, different metal (e.g., aluminum) hydrocarbon compounds may be used in different deposition cycles to modify the metal (e.g., aluminum) incorporation in the metal carbide film. For example, in a deposition process to deposit a NbMC layer, a first cycle can use a first metal (e.g., aluminum) compound and one or more second cycles can use a different metal (e.g., aluminum or other metal) compound.

As noted above, a purge gas can be used to evacuate the first precursor or the second precursor prior to introducing any other precursor(s) and/or between exposing or deposition steps. Exemplary purge gases include inert gases, such as argon (Ar) and helium (He), and nitrogen (N₂).

Additional reactants can also be included during a deposition process to, for example, reduce the deposited film or to incorporate a further chemical species in the film. In some embodiments, an additional reactant can be a reducing agent, such as plasma-excited species of hydrogen generated by, e.g., an in situ or remote plasma generator. The reducing agent can be pulsed to the reaction space (or generated in the reaction space) after the first, second and/or other precursor is introduced into the reaction chamber to reduce the deposited film. The reducing agent can be used, for example, to remove impurities, such as halogen atoms or oxidizing material (e.g., oxygen atoms) in the film and/or the substrate. The reducing agent can also be used to control the incorporation of metal (e.g., aluminum) or metalloid (e.g., boron) into the NbMC film, thereby controlling/manipulating the properties/characteristics of the film. In some embodiments, thermal and plasma cycles are used in the same deposition process to control metal (e.g., aluminum) concentration in the deposited film. The ratio of thermal cycles to plasma cycles can be selected to achieve the desired metal (e.g., aluminum) concentration and/or concentration profile in the thin film. In some embodiments the deposition process does not comprise plasma or excited species.

As noted above, when used, plasma parameters can be selected or manipulated to modify characteristics of a NbMC layer—for example, an amount of metal and/or metalloid incorporated into the NbMC film and/or ratio of niobium and/or metal (and/or metalloid) to carbon. That is, in some embodiments, film composition can be controlled as a function of plasma parameters. In addition to composition, other film characteristics, such as crystallinity, crystal lattice constant, resistivity, and crystal stress, can be adjusted by selecting and/or adjusting appropriate plasma parameters.

“Plasma parameters” include, for example, RF power and RF frequency. One plasma parameter, such as RF power, or multiple plasma parameters, i.e., a set of plasma parameters, such as RF power and RF frequency, can be adjusted in one or more deposition cycles to achieve the desired film properties. Plasma parameters can be selected to yield a NbMC film with a desired composition. As an example, the RF power may be selected to affect a stoichiometry as desired. As another example, a particular plasma pulse duration or RF power on time can be used to obtain a desired composition. As still another example, the desired composition can be achieved by selecting a combination of RF power, reactant pulse duration, and reactant flow rate.

In some cases, plasma parameters are selected to form one or more NbMC layers of a gate electrode to yield a desired structure work function. Further, the plasma can be used to form one NbMC layer in a structure and not used or used with different plasma parameter settings to form another metal carbide layer within the structure.

In some cases, plasma-excited species comprise a reducing agent, such as hydrogen. Plasma-excited species of hydrogen include, without limitation, hydrogen radicals (H*) and hydrogen cations (e.g., H+, H2+). Plasma-excited species of hydrogen can be formed in situ or remotely, for example, from molecular hydrogen (H2) or hydrogen-containing compounds (e.g., silane, disilane, trisilane, diborane, ethane, ethylene, propane, propylene, and the like).

Relationships between deposition parameters, such as plasma, precursors, etc. and thin film composition can be established by selecting parameter(s) and depositing an NbMC film by a particular deposition process using the selected parameter(s) until a film of desired thickness is formed. The film composition and characteristics can then be determined and, if desired, another NbMC film can be deposited using different parameters and/or having different properties. This process can be repeated for different parameters to develop relationships between the parameters and film composition. By selecting appropriate reaction conditions, a compound film with a composition and/or properties as desired can be formed.

Referring now to the figures, exemplary structures including one or more NbMC layers are illustrated. FIG. 1 illustrates a structure 100 including a substrate 102 and a NbMC layer 104 overlying substrate 102.

Substrate 102 can include any material having a surface onto which a layer can be deposited. Substrate 102 can include a bulk material, such as silicon (e.g., single crystal silicon), and may include one or more layers overlying the bulk material. Further, the substrate can include various features, such as trenches, vias, lines, and the like formed within or on at least a portion of the substrate. The features can have an aspect ratio, defined as a feature's height divided by the feature's width of, for example, greater than or equal to 5, greater than or equal to 10, greater than or equal to 15, or greater than or equal to 20.

NbMC layer 104 can be formed as described above and can include one or more NbMC films/layers that can be discrete (e.g., form a laminate) or be mixed. NbMC layer 104 can be formed using one or more processes.

FIG. 2 illustrates another structure 200 in accordance with further examples of the disclosure. Structure 200 includes a substrate 202, a dielectric layer 204, a layer (e.g., an etch stop layer) 206, and a NbMC layer 212. In the illustrated example, NbMC layer 212 includes a first NbMC layer 208 and a second NbMC layer 210.

Substrate 202 can be the same or similar to substrate 102.

Dielectric layer 204 can include, for example, high dielectric constant (high-k) material. Exemplary dielectric materials suitable for layer 204 include silicon oxide, silicon nitride, and high dielectric constant materials. In this context, high-k dielectric material has a dielectric constant (k) value greater than that of silicon oxide. For example, the high-k material can have a dielectric constant greater than 5, or greater than 10. Exemplary high-k materials include, without limitation, HfO₂, ZrO₂, Al₂O₃, TiO₂, Ta₂O₅, Sc₂O₃, lanthanide oxides and mixtures thereof, silicates and materials, such as YSZ (yttria-stabilized zirconia), barium strontium titanate (BST), strontium titanate (ST), strontium bismuth tantalate (SBT) and bismuth tantalate (BT). The high-k dielectric material can be deposited by a cyclic deposition process, such as an ALD process.

Layer 206 can include, for example, TiN, which can be deposited over the dielectric layer. Layer 206 can act as an etch stop layer, barrier layer, or the like.

First and second NbMC layers 208 and 210 can be formed as described above. First and second NbMC layers 208 and 210 can be formed using different processes, such that the composition and/or properties of the two layers differ. By way of examples, first NbMC layer 208 can be formed using a metal halide precursor and a first organometallic precursor and second niobium metal halide layer 210 can be formed using the metal halide and a second organometallic precursor. As noted above, although separately illustrated, first NbMC layer 208 and second NbMC layer 210 can mix either during or after deposition of second metal carbide layer 210. Further, first and/or second NbMC layer can be continuous or discontinuous. Finally, although illustrated with two NbMC layers 208, 210, other structures in accordance with this disclosure include substrate 202, layers 204-206, and a single NbMC layer.

FIG. 3 illustrates another structure 300 in accordance with exemplary embodiments of the disclosure. Structure 300 includes a substrate 302, a dielectric layer 304, a layer 306, and metal carbide material 314 that includes a first metal carbide layer 308, a second metal carbide layer 310, and a third metal carbide layer 312. Substrate 302, dielectric layer 304, and layer 306 can be the same or similar to substrate 102, dielectric layer 204, and layer 206. In the illustrated example, metal carbide material 314 includes three layers. In accordance with exemplary embodiments of the disclosure, adjacent layers of metal carbide material 314 are different—e.g., are formed by different processes and/or have different compositions. By way of examples, first metal carbide layer 308 can include a first transition metal (e.g., titanium), carbon, and aluminum; second metal carbide layer 310 can include niobium, carbon, and aluminum, and third metal carbide layer 312 can include the first transition metal, carbon, and aluminum. The first, second, and third metal carbide layers can be discrete layers or two or more of the layers can be mixed. Further, each layer can be continuous or discontinuous. Additionally, although illustrated with three metal carbide layers, metal carbide material 314 and/or structure 300 can include additional metal carbide layers, as well as other layers found in similar structures.

FIG. 4 illustrates another structure 400 in accordance with exemplary embodiments of the disclosure. Structure 400 includes a substrate 402, a dielectric layer 404, a layer 406, NbMC material 408, an additional layer 410, and a metal layer 412. Substrate 402, dielectric layer 404, layer 406, and NbMC 404 can be the same or similar to the respective layers described above in connection with FIGS. 1-3. For example, NbMC material 404 can include one or more NbMC layers or one or more NbMC layers mixed or laminated with other metal carbide layers. Additional layer 410 can be the same or similar to layer 306. Metal layer 412 can include any suitable metal, such as tungsten (W).

FIG. 5 illustrates a device 500 in accordance with various embodiments of the disclosure. Other devices within the scope of the disclosure can include other structures, such as the structures described herein. In the illustrated example, device 500 includes a substrate 502, having a source region 504, a drain region 508, and a channel region 506 there between.

Device 500 also includes a dielectric layer 510, a layer 512, NbMC material 514, optionally an additional layer 516, and optionally metal layer 518. Dielectric layer 510, layer 512, NbMC material 514, additional layer 516, and metal layer 518 can be the same or similar to the respective layers described above in connection with structures 100-400.

Device 500 can be configured as either an NMOS or a PMOS device and can form part of a CMOS device. A work function of device 500 can be tuned as described herein to facilitate formation of NMOS and CMOS devices.

It is to be understood that the configurations and/or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be considered in a limiting sense. In the case of exemplary methods, specific routines or steps described herein can represent one or more of any number of processing strategies. Thus, the various acts illustrated can be performed in the sequence illustrated, performed in other sequences, performed simultaneously, or omitted in some cases.

The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, layers, structures and devices, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof. 

What is claimed is:
 1. A method of forming a thin-film structure, the method comprising the steps of: providing a substrate within a reaction space; using a first cyclic deposition process, forming a layer comprising NbAlC, on the surface of the substrate, wherein the first cyclic deposition process comprises at least one deposition cycle comprising exposing the substrate to a first precursor comprising Nb and a second precursor comprising aluminum and carbon; and using a second cyclic deposition process comprising at least one deposition cycle comprising exposing the substrate alternately to a third precursor comprising Nb and a fourth precursor comprising a metal and carbon, wherein at least one of: the third precursor differs from the first precursor and the fourth precursor differs from the second precursor, and wherein the first cyclic deposition process and the second cyclic deposition process have at least one precursor that differs, wherein a composition of the layer comprising NbAlC comprises about 30 atomic percent to about 60 atomic percent carbon, about 10 atomic percent to about 40 atomic percent niobium, and about 10 atomic percent to about 40 atomic percent aluminum, wherein a thickness of the layer comprising NbAlC is less than 50 Å, and wherein an effective work function of the structure comprising the layer comprising NbAlC is less than 4.4 eV.
 2. The method of claim 1, wherein the first precursor comprises a niobium halide.
 3. The method of claim 2, wherein the niobium halide comprises niobium chloride.
 4. The method of claim 1, wherein the first cyclic deposition process comprises an atomic layer deposition cyclic process.
 5. The method of claim 1, further comprising a step of introducing one or more plasma-excited species to the reaction space.
 6. The method of claim 1, wherein the second precursor comprises an organometallic precursor.
 7. The method of claim 1, wherein the second precursor comprises triethylaluminum (TEA).
 8. The method of claim 1, wherein the second precursor comprises tritertbutylaluminum (TTBA).
 9. The method of claim 1, wherein the NbAlC layer is a part of NMOS metal gate structure and the work function of the metal gate in the structure is less than 4.4 eV.
 10. The method of claim 1, wherein the deposition cycle further comprises exposing the substrate to a purge gas and/or removing excess first precursor and reaction by products, if any, from the substrate; and exposing the substrate to the purge gas and/or removing excess second precursor and reaction by products, if any, from the substrate.
 11. The method of claim 1, wherein the NbAlC layer comprises at least about 20% of aluminum on atomic basis.
 12. The method of claim 1, wherein the NbAlC layer resistivity is less than about 1000 μohm-cm.
 13. The method of claim 1, wherein the second precursor comprises an aluminum hydrocarbon compound comprising a C2-C4 alkyl ligand.
 14. The method of claim 1, further comprising depositing a layer comprising TiN before depositing the NbAlC layer.
 15. The method of claim 1, further comprising exposing the substrate alternately to a first precursor comprising Nb and a second precursor comprising aluminum and carbon. 